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The FQP30N06L is a N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. Continuous Drain Current Id:32A Drain Source Voltage Vds:60V On Resistance Rds(on):0.027ohm Rds(on) Test Voltage Vgs:10V Threshold Voltage Vgs:2.5V Power Dissipation Pd:79W Transistor Case Style:TO-220AB Operating Temperature Max:175°C Minimum Operating Temperature:-55 °C Package include 10pcs *FQP30N06L