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Insulated Gate Bipolar Transistor IGBT Theory and Design

R 8,555

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Insulated Gate Bipolar Transistor IGBT Theory and Design
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
- All-in-one resource
- Explains the fundamentals of MOS and bipolar physics.
- Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Country USA
Brand Wiley-IEEE Press
Manufacturer Wiley-IEEE Press
Binding Hardcover
UnitCount 1
EANs 9780471238454
ReleaseDate 0000-00-00