Mosfet Modeling for VLSI Simulation: Theory And Practice

Mosfet Modeling for VLSI Simulation: Theory And Practice (International Series on Advances in Solid State Electronics) (International Series on Advances in Solid State Electronics and Technology)

The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Country USA
Brand World Scientific Publishing Company
Manufacturer World Scientific Pub Co Inc
Binding Hardcover
ItemPartNumber illustrations
UnitCount 1
EANs 9789812568625
ReleaseDate 0000-00-00

Country	USA
Brand	World Scientific Publishing Company
Manufacturer	World Scientific Pub Co Inc
Binding	Hardcover
ItemPartNumber	illustrations
UnitCount	1
EANs	9789812568625
ReleaseDate	0000-00-00

Mosfet Modeling for VLSI Simulation: Theory And Practice (International Series on Advances in Solid State Electronics) (International Series on Advances in Solid State Electronics and Technology)