CMOS: Circuit Design, Layout, and Simulation (IEEE Press Series on Microelectronic Systems)
Verbal explanations are favored over mathematical formulas, graphs are kept to a minimum, and line drawings are used in this user-friendly book. Clear guidance and advice are provided for those professionals who lay out analog circuits. Matching of resistors and capacitors: Includes causes of mismatch, particularly the hydrogen effect and package shift. MOS Transistors: Covers a brief history of floating gate devices, EPROM and EEPROM. Applications of MOS transistors: Expands information on failure mechanisms, including BVdss/Bvdii, SILC, NBTI/PTBI and GIDL and the difference between electrical and electrothermal SOA. Consideration of failure mechanisms as crucial to layout: Integrates further information into many chapters covering various devices. Standard bipolar, polygate CMOS and analog BiCMOS: Covers all three fundamental processes. A valuable reference for professional layout designers.
Country | USA |
Brand | Pearson |
Manufacturer | Pearson |
Binding | Paperback |
ItemPartNumber | Illustrations |
UnitCount | 1 |
UPCs | 000131464108 |
EANs | 9780131464100 |
ReleaseDate | 0000-00-00 |